Title :
On the charge control of the two-dimensional electron gas for analytic modeling of HEMTs
Author :
Shey, An-Jui ; Ku, Walter H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A simple charge control model is developed for the two-dimensional electron gas (2-DEG) of high-electron-mobility transistors (HEMTs). This model explicitly takes into account the effective distance of the 2-DEG from the heterointerface and has been developed for use in analytic I-V and C-V modeling. In this model, the Fermi energy level versus the 2-DEG sheet carrier-concentration is represented by a simplified expression derived from the triangular potential well approximation and is shown to be dominated by terms with different functional forms in two distinct operation regions: a moderate carrier-concentration region and a subthreshold region. The validity of the analytic charge control model is supported by the calculated results of a self-consistent quantum mechanical model.<>
Keywords :
carrier density; electron gas; high electron mobility transistors; semiconductor device models; C-V modeling; Fermi energy level; HEMTs; I-V modeling; analytic modeling; charge control model; high-electron-mobility transistors; moderate carrier-concentration region; self-consistent quantum mechanical model; sheet carrier-concentration; subthreshold region; triangular potential well approximation; two-dimensional electron gas; Electrons; Energy states; HEMTs; MODFETs; Poisson equations; Potential well; Quantum mechanics; Substrates; Voltage;
Journal_Title :
Electron Device Letters, IEEE
