• DocumentCode
    872189
  • Title

    Inverter performance of deep-submicrometer MOSFETs

  • Author

    Sai-Halasz, George A. ; Wordeman, Matthew R. ; Kern, D.P. ; Rishton, S. ; Ganin, E. ; Ng, H.Y. ; Moy, D. ; Chang, T.H.P. ; Dennard, Robert H.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    9
  • Issue
    12
  • fYear
    1988
  • Firstpage
    633
  • Lastpage
    635
  • Abstract
    Switching delay measurements are reported for self-aligned, almost fully scaled, liquid-nitrogen-temperature operation NMOS inverters with deep-submicrometer gate lengths. The shortest delay per stage of 13.1 ps was measured in 0.1- mu m gate-length circuits. Circuit simulations based on the measured device characteristics show that still shorter delay times can be reached with such a technology.<>
  • Keywords
    MOS integrated circuits; delays; integrated logic circuits; logic gates; 0.1 micron; 13.1 ps; MOSFET; NMOS inverters; circuit simulations; deep-submicrometer gate lengths; delay times; switching delay; Circuits; Delay; Fabrication; Inverters; Length measurement; MOSFETs; Pulse measurements; Ring oscillators; Semiconductor device measurement; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.20419
  • Filename
    20419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=872189