Title :
Single-transistor latch in SOI MOSFETs
Author :
Chen, C. E Daniel ; Matloubian, Mishel ; Sundaresan, R. ; Mao, B.Y. ; Wei, C.C. ; Pollack, Gordon P.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A single-transistor latch phenomenon observed in silicon-on-insulator (SOI) MOSFETs is reported. This latch effect, which occurs at high drain biases, is an extreme case of floating-body effects which are present in SOI MOSFETs. The floating body results in positive feedback between the impact ionization current, body-to-source diode forward bias, and transistor currents. At large drain voltages, this positive feedback can maintain a high-drain-to-source current even when the MOS gate is biased well below its threshold voltage.<>
Keywords :
impact ionisation; insulated gate field effect transistors; semiconductor-insulator boundaries; SOI MOSFETs; Si-SiO/sub 2/; body-to-source diode forward bias; floating-body effects; high drain biases; high-drain-to-source current; impact ionization current; positive feedback; single-transistor latch phenomenon; transistor currents; Diodes; Feedback; Hysteresis; Impact ionization; Latches; MOSFETs; Process design; Substrates; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
