• DocumentCode
    872241
  • Title

    Analytic Expressions for the Critical Charge in CMOS Static RAM Cells

  • Author

    Jaeger, R.C. ; Fox, R.M. ; Diehl, S.E.

  • Author_Institution
    Electrical Engineering Department 207 Dunstan Hall Auburn University, AL 36849
  • Volume
    30
  • Issue
    6
  • fYear
    1983
  • Firstpage
    4616
  • Lastpage
    4619
  • Abstract
    Common trajectories associated with logic state reversal are discussed, and an analytical expression is developed for the critical charge required for single event upset of CMOS static RAMs.
  • Keywords
    CMOS logic circuits; Circuit analysis computing; Circuit simulation; Computer simulation; Differential equations; Inverters; Pulse measurements; Read-write memory; Single event upset; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4333183
  • Filename
    4333183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=872241