Title :
Analytic Expressions for the Critical Charge in CMOS Static RAM Cells
Author :
Jaeger, R.C. ; Fox, R.M. ; Diehl, S.E.
Author_Institution :
Electrical Engineering Department 207 Dunstan Hall Auburn University, AL 36849
Abstract :
Common trajectories associated with logic state reversal are discussed, and an analytical expression is developed for the critical charge required for single event upset of CMOS static RAMs.
Keywords :
CMOS logic circuits; Circuit analysis computing; Circuit simulation; Computer simulation; Differential equations; Inverters; Pulse measurements; Read-write memory; Single event upset; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4333183
