Title :
Influence of interface states on the capacitance of homo- and heterojunctions
Author :
Van de Wiele, F. ; Van Overstraeten, R.
Author_Institution :
Catholic University of Louvain, Electronic Research Laboratories, Section Solid State Electronics, Heverlee, Belgium
fDate :
5/1/1967 12:00:00 AM
Abstract :
The difference between the calculated and the measured built-in voltage for homo- and heterojunctions is explained by introducing interface states in the vicinity of the metallurgical junction. A general formula is derived for the depletion-layer capacitance of abrupt junctions with interface states.
Keywords :
p-n junctions; semiconductor junctions; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670168
