Title :
IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength
Author :
Tsaur, Bor-Yeu ; Weeks, Melanie M. ; Trubiano, R. ; Pellegrini, Paul W. ; Yew, R.R.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
IrSi Schottky-barrier detectors were fabricated with approximately 40-AA-thick silicide electrodes formed on p-type Si substrates by in situ processing in a conventional electron-beam evaporator. High-resolution transmission electron microscopy shows that these detectors have clean, abrupt silicide-Si interfaces. For operation at a reverse-bias voltage of 2 V, the cutoff wavelength is approximately 10 mu m, as determined by quantum efficiency measurements.<>
Keywords :
Schottky-barrier diodes; indium compounds; infrared detectors; transmission electron microscope examination of materials; 10 micron; 2 V; HR TEM; IrSi-Si interface; Schottky-barrier infrared detectors; Si substrate; cutoff wavelength; electron-beam evaporator; in situ processing; quantum efficiency; reverse-bias voltage; silicide electrodes; Annealing; Infrared detectors; Laboratories; Optical films; Semiconductor films; Sensor arrays; Silicides; Substrates; Transmission electron microscopy; Voltage;
Journal_Title :
Electron Device Letters, IEEE
