Title :
Direct current-voltage characteristics of transistors in the avalanche region
fDate :
6/1/1968 12:00:00 AM
Abstract :
A graphical method is proposed for plotting the transistor avalanche characteristics, approximating the actual behavior of the base-emitter junction by means of the common base input characteristic. Experimental results for a typical avalanche transistor are reported.
Keywords :
Avalanche; Transistors; Bismuth; Current measurement; Current-voltage characteristics; Diodes; Equations; Germanium; Silicon; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1968.1049869
