Title :
New method for measuring carrier concentration profile near a GaAs surface through a network analyzer
Author :
Fukai, Y.K. ; Muraguchi, Masahiro
Author_Institution :
Electr. Commun. Labs., NTT Corp., Tokyo, Japan
Abstract :
A method based on S-parameter measurement which precisely obtains the junction capacitance of the Schottky gate of GaAs MESFETs is proposed. In this method the junction capacitance is derived from a diode circuit simulation based on S-parameter measurements. Determination of the junction capacitance under forward-biased voltage and the carrier concentration profile near the channel surface of Schottky gates are possible with this method.<>
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; capacitance measurement; carrier density; gallium arsenide; network analysers; semiconductor device testing; GaAs; GaAs surface; MESFETs; S-parameter measurement; Schottky gate; carrier concentration profile; diode circuit simulation; forward-biased voltage; junction capacitance; network analyzer; Capacitance measurement; Circuits; Contact resistance; FETs; Frequency measurement; Gallium arsenide; MESFETs; Scattering parameters; Schottky diodes; Voltage;
Journal_Title :
Electron Device Letters, IEEE
