DocumentCode :
87248
Title :
Novel Photo-Defined Polymer-Enhanced Through-Silicon Vias for Silicon Interposers
Author :
Thadesar, Paragkumar A. ; Bakir, Muhannad S.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
3
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
1130
Lastpage :
1137
Abstract :
This paper presents a silicon interposer interconnection solution featuring novel electrical and optical through-silicon vias (TSVs). The copper-based electrical TSVs include polymer-clad TSVs and polymer-embedded vias (copper vias embedded in polymer wells within a low resistivity silicon substrate). Fabrication of the novel electrical TSVs is shown along with high-frequency measurements for polymer-embedded vias. Optical TSVs are fabricated in parallel with the polymer-clad TSVs to provide chip-to-motherboard optical access at the 850-nm wavelength. Optical loss measurements are performed for the fabricated optical TSVs.
Keywords :
copper; optical interconnections; optical polymers; silicon; three-dimensional integrated circuits; chip-to-motherboard optical access; optical TSV; optical loss measurements; photodefined polymer-enhanced through-silicon vias; polymer wells; polymer-clad TSV; polymer-embedded vias; silicon interposer interconnection; wavelength 850 nm; Electrical loss measurements; electrical resistance measurements; lithography; optical interconnections; optical loss measurements; through-silicon vias (TSVs);
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2013.2261122
Filename :
6523083
Link To Document :
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