DocumentCode :
872524
Title :
200-Megabit-pulsed avalanche oscillation with Ge silver- bonded diode in 50-GHz region
Author :
Fukatsu, Yoshiharu ; Ohmori, Masamichi
Volume :
3
Issue :
3
fYear :
1968
Firstpage :
231
Lastpage :
233
Abstract :
Some experimental results with an IMPATT diode operating in the 50-GHz region are presented, including 200-megabit- pulsed avalanche oscillation, injection locking, frequency spectra of the free running oscillation and the locked oscillation, and the noise spectra around the avalanche oscillation.
Keywords :
Avalanche diodes; avalanche diodes; Bonding; Breakdown voltage; Circuit optimization; Diodes; Frequency; Injection-locked oscillators; Power generation; Pulse circuits; Tuning;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1968.1049889
Filename :
1049889
Link To Document :
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