Title :
Behaviour of n-type gallium arsenide in strong microwave fields
Author :
Acket, G.O. ; Lam, Ha T.
Author_Institution :
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
fDate :
6/1/1967 12:00:00 AM
Abstract :
Results are presented concerning the change of attenuation and generation of harmonics in n-type gallium arsenide, subjected to a strong microwave electric field.
Keywords :
III-V semiconductors; electromagnetic waves; gallium arsenide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670200
