University of Bucharest, Faculty of Physics, Bucharest, Romania
Volume :
3
Issue :
6
fYear :
1967
fDate :
6/1/1967 12:00:00 AM
Firstpage :
268
Lastpage :
269
Abstract :
The results of transistors on ZnTe and InSb thin films are given. The t.f.t. gm transconductance obtained varied between 5 and 12mA/V. The input impedance of t.f.t. on ZnTe and InSb is high (>109¿).
