Title :
Low-light-level photoconductivity in semi-insulating GaAs
Author :
Nakajima, Kensuke ; Hirohata, Toru ; Kan, Haibin ; Mizushima, Y.
Author_Institution :
Hamamatsu Photonics, Japan
Abstract :
A peculiar photoconductive property with a positive temperature coefficient in a semi-insulating GaAs photodiode is found in the room temperature range. Also, the low-light-level photoconductivity is higher than usual. The authors suggest that an ionised-impurity scattering mechanism is dominant. Theoretical responsivity is compared with the measured value.
Keywords :
III-V semiconductors; gallium arsenide; photoconductivity; photodetectors; photodiodes; GaAs:Cr,O substrate; MSM photodetector; ionised-impurity scattering; low-light-level photoconductivity; positive temperature coefficient; responsivity; room temperature range; semiinsulating GaAs photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921311
