• DocumentCode
    872686
  • Title

    Dielectrically isolated lateral emitter switched thyristor

  • Author

    Baliga, B. Jayant ; Huang, Y.S.

  • Author_Institution
    Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA
  • Volume
    28
  • Issue
    22
  • fYear
    1992
  • Firstpage
    2051
  • Lastpage
    2052
  • Abstract
    The operation of a 500 V dielectrically isolated lateral emitter switched thyristor (DI-LEST) is described for the first time. Experimental devices exhibit an on-state voltage drop of 2.35 V at a current density of 100 A/cm2, and a maximum controllable current density of about 200 A/cm2. The on-state voltage drop decreases with increasing drift layer thickness consistent with the uniform lateral current flow observed in two-dimensional numerical simulations.
  • Keywords
    current density; electric potential; semiconductor switches; thyristors; 500 V; RESURF design; current density; dielectrically isolated lateral emitter switched thyristor; drift layer thickness; maximum controllable current density; on-state voltage drop; two-dimensional numerical simulations; uniform lateral current flow;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921314
  • Filename
    204574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=872686