Title :
DC analysis of an MOS source follower
Author :
Frohman-Bentchkowsky, D. ; Vadasz, L.
Abstract :
The source follower operation of a normally off MOS device is analyzed. Input-output relationships in terms of applied voltages and device parameters are derived. Experimental verifications of the foregoing theory are included.
Keywords :
Field effect devices; field effect devices; Doping; Equations; Impurities; Leakage current; Logic circuits; Logic devices; MOS devices; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1968.1049908
