Title :
20 Gbit/s GaAs MESFET multiplexer IC using a novel T-type flip-flop circuit
Author :
Murata, Kentaro ; Ohhata, M. ; Togashi, Minoru ; Suzuki, M.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A 20 Gbit/s two-bit multiplexer (MUX) IC has been developed using 0.2 mu m-gate-length MESFETs with a cutoff frequency of 50 GHz. This operating speed is about 70% faster than reported two-bit MUXs using MESFETs of a similar cutoff frequency. The IC was realised with a novel static T-type flip-flop circuit (T-F/F). The T-F/F showed stable operation up to 20 GHz, about 30% faster than a conventional IC fabricated with the same process.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital integrated circuits; field effect integrated circuits; flip-flops; gallium arsenide; multiplexing equipment; 0.2 micron; 20 GHz; 20 Gbit/s; 50 GHz; GaAs; MESFET multiplexer IC; T-type flip-flop circuit; two-bit multiplexer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921340
