Title :
Frequency dispersion of transconductance: a tool to characterise deep levels in III-V FETs
Author :
Paccagnella, Alessandro ; Tedesco, C. ; Canali, Carlo ; Cetronio, A. ; Lanzieri, C.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Abstract :
Frequency dispersion of transconductance gm(f) has been exploited to quantitatively investigate the properties of deep traps in III-V FET devices, namely DX centres in GaAs/AlGaAs HEMTs. This method requires simple data acquisition and elaboration and is applied directly to packaged devices. Thermal emission energy Ea=0.46 eV and capture cross-section sigma =3.10-14 cm2 have been obtained for DX centers in AlGaAs, in good agreement with published data. By increasing VDS, the authors measured also an Ea decrease due to hot electron trapping by the DX centres.
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electron traps; field effect transistors; gallium arsenide; high electron mobility transistors; hole traps; hot carriers; semiconductor device testing; DX centres; GaAs-AlGaAs; HEMTs; III-V FET devices; capture cross-section; deep levels characterisation; deep traps; frequency dispersion; hot electron trapping; packaged devices; thermal emission energy; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921351
