Transistor Schottky-barrier-diode integrated logic circuit

A new high-speed low-power logic circuit using Schottky barrier diodes to avoid saturation of bipolar transistors is described. An experiment using discrete devices and a theoretical calculation show the possibility of subnanosecond logic using a saturated-type transistor logic circuit. A theoretical comparison with CML shows a 2:1 advantage in the speed-power product. The compatibility of Schottky barrier diode with monolithic silicon integrated circuit processing is shown. A prototype TTL circuit is described. Experimental results are given.