Title :
Large grain poly-Si(∼rm 10μm) TFTs prepared by excimer laser annealing through a thick SiON absorption layer
Author :
Liu, Sheng-Da ; Lee, Si-Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Poly-Si with large grain size of 10.4×4.4 μm2 was realized by excimer laser annealing (ELA) through the substrate and an 1 μm thick silicon oxynitride (SiON) absorption layer underlying the top amorphous silicon. Thin-film transistors (TFTs) can then be made on this single poly-Si grain and show good electrical performance.
Keywords :
MOSFET; elemental semiconductors; grain size; laser beam annealing; semiconductor device measurement; silicon; thin film transistors; 1 micron; 10.4 micron; 4.4 micron; Si-SiON; amorphous silicon; electrical performance; excimer laser annealing; large grain Poly-Si TFT; silicon oxynitride; substrate; thick SiON absorption layer; thin-film transistors; Absorption; Active matrix liquid crystal displays; Annealing; Crystallization; Glass; Grain size; Optical control; Silicon; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.821704
