• DocumentCode
    873402
  • Title

    Large grain poly-Si(∼rm 10μm) TFTs prepared by excimer laser annealing through a thick SiON absorption layer

  • Author

    Liu, Sheng-Da ; Lee, Si-Chen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    51
  • Issue
    2
  • fYear
    2004
  • Firstpage
    166
  • Lastpage
    171
  • Abstract
    Poly-Si with large grain size of 10.4×4.4 μm2 was realized by excimer laser annealing (ELA) through the substrate and an 1 μm thick silicon oxynitride (SiON) absorption layer underlying the top amorphous silicon. Thin-film transistors (TFTs) can then be made on this single poly-Si grain and show good electrical performance.
  • Keywords
    MOSFET; elemental semiconductors; grain size; laser beam annealing; semiconductor device measurement; silicon; thin film transistors; 1 micron; 10.4 micron; 4.4 micron; Si-SiON; amorphous silicon; electrical performance; excimer laser annealing; large grain Poly-Si TFT; silicon oxynitride; substrate; thick SiON absorption layer; thin-film transistors; Absorption; Active matrix liquid crystal displays; Annealing; Crystallization; Glass; Grain size; Optical control; Silicon; Substrates; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.821704
  • Filename
    1262643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=873402