DocumentCode :
873479
Title :
Low-light-level properties of the phototransistor charge-storage mode
Author :
Brugler, J.S.
Volume :
4
Issue :
3
fYear :
1969
fDate :
6/1/1969 12:00:00 AM
Firstpage :
136
Lastpage :
144
Abstract :
The phototransistor charge-storage or integration mode at low light levels is described accurately using a simple model. The base-emitter junction governs charge readout at low levels, causing very nonlinear circuit behavior. Sluggish transient response, increased sensitivity of output to transistor current gain, and a nonlinear transfer characteristic degrade phototransistor low-light-level behavior more severely than junction dark current.
Keywords :
Phototransistors; Space charge; phototransistors; space charge; Bandwidth; Dark current; Degradation; Image storage; Leakage current; Linearity; Magnetic separation; Phototransistors; Solid state circuits; Transient response;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1969.1049976
Filename :
1049976
Link To Document :
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