Title :
Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs
Author :
Zeng, Lang ; Xia, Zhiliang ; Du, Gang ; Kang, Jinfeng ; Han, Ruqi Q. ; Liu, Xiaoyan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing
Abstract :
In this paper, we analyze the gate-induced image force barrier lowering in a 45-nm-gate-length ultra-thin-body silicon-on-insulator structure by using 2D full-band self-consistent ensemble Monte Carlo simulation with both tunneling current and thermal emission current. Results show that gate-induced barrier lowering has a very significant influence on the drive current. The influence of gate voltage, Schottky barrier height, spacer and channel doping concentration is also investigated and a theoretical analysis is presented.
Keywords :
Monte Carlo methods; Schottky barriers; field effect transistors; semiconductor device models; silicon-on-insulator; tunnelling; 2D full-band self-consistent ensemble Monte Carlo simulation; Schottky barrier FETs; Schottky barrier height; Si; channel doping concentration; drive current; gate voltage; gate-induced image force barrier lowering; thermal emission current; tunneling current; ultrathin-body silicon-on-insulator structure; Image force; Monte Carlo simulation; SB FETs (SB FETs); Schottky barrier (SB) lowering;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2008.2006164
