DocumentCode :
873596
Title :
Prediction of CMOS APS design enabling maximum photoresponse for scalable CMOS technologies
Author :
Shcherback, Igor ; Yadid-Pecht, Orly
Author_Institution :
VLSI Syst. Center, Ben-Gurion Univ., Beer-Sheva, Israel
Volume :
51
Issue :
2
fYear :
2004
Firstpage :
285
Lastpage :
288
Abstract :
This brief represents the CMOS active pixel sensor (APS) photoresponse model use for maximum pixel photosignal prediction in scalable CMOS technologies. We have proposed a simple approximation determining the technology-scaling effect on the overall device photoresponse. Based on the above approximation and the data obtained from the CMOS 0.5 μm process thorough investigation we have theoretically predicted, designed, measured and compared the optimal (in the output photosignal sense) pixel in a more advanced, CMOS 0.35 μm technology. Comparison of both, our theoretically predicted and modeled results and the results obtained from the measurements of an actual pixel array gives excellent agreement. It verifies the presented scaling-effect approximation and validates the usefulness of our model for design optimization in scalable CMOS technologies.
Keywords :
CMOS image sensors; avalanche photodiodes; APS photoresponse model; CMOS 0.35 μm technology; CMOS 0.5 μm process; CMOS APS design; CMOS active pixel sensor; device photoresponse; maximum photoresponse; maximum pixel photosignal prediction; pixel array; scalable CMOS technologies; scaling-effect approximation; technology-scaling effect; CMOS technology; Conferences; Dielectrics; EPROM; Electron devices; Leakage current; Nonvolatile memory; Probability distribution; Semiconductor memory; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2003.821882
Filename :
1262660
Link To Document :
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