Title :
Audiofrequency noise in silicon
Author_Institution :
Centre Electronique Horloger SA, Neuchâtel, Switzerland
fDate :
9/1/1967 12:00:00 AM
Abstract :
Experimental results showing the effects of thermal oxidation and low-temperature annealing in nitrogen on noise-power spectra of single-crystal silicon samples are presented.
Keywords :
crystal properties; noise; noise measurement; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670310
