Title :
Energy-dependent mobility in the small-signal analysis of waves in semiconductors
Author_Institution :
M-O Valve Co. Limited, Research Laboratories, GEC Hirst Research Centre, Wembley, UK
fDate :
9/1/1967 12:00:00 AM
Abstract :
It is shown that the effect of energy-dependent mobility can be included in the small-signal analysis of semiconductot samples by an appropriate change in the square of the plasma frequency of the carriers.
Keywords :
semiconductors; solid-state plasma;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670323
