DocumentCode :
873845
Title :
Super-gain transistors for IC´s
Author :
Widlar, R.J.
Volume :
4
Issue :
4
fYear :
1969
fDate :
8/1/1969 12:00:00 AM
Firstpage :
249
Lastpage :
251
Abstract :
Transistors with current gains of 2000 to 10000 at collector currents less than 1 μA can now be made in monolithic circuits. This is more than ten times the gain of present-day discrete transistors. The significance of this breakthrough is greatest for IC operational amplifiers as lower input bias currents are constantly being sought. Circuit techniques are available, namely bootstrapping and cascade connections, that take advantage of the high-current gain of one transistor type and the high-breakdown voltage of the second, producing the equivalent of a high gain, high-voltage device. This may double the number of transistors needed to perform a given function, but it is an economical approach for monolithic IC´s as active devices have a relatively low cost.
Keywords :
Monolithic integrated circuits; Transistors; monolithic integrated circuits; transistors; CD recording; Circuit synthesis; Cost function; Delay; Digital integrated circuits; Diodes; Electric breakdown; Neutrons; Operational amplifiers; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1969.1050006
Filename :
1050006
Link To Document :
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