Simple theory for l.s.a. operation of Gunn-effect semiconductors

Author

Heinle, W.

Author_Institution

AEG-Telefunken, Forschungsinstitut, Ulm, West Germany

Volume

Issue

fYear

1967

fDate

9/1/1967 12:00:00 AM

Firstpage

429

Lastpage

430

Abstract

Equations are derived and discussed, describing the dynamic behaviour of the accumulation layer and the efficiency in the I.s.a. mode of operation.

Keywords

Gunn effect; oscillators; semiconductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

DOI

10.1049/el:19670335

Filename

4207385

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