Title :
Simple theory for l.s.a. operation of Gunn-effect semiconductors
Author_Institution :
AEG-Telefunken, Forschungsinstitut, Ulm, West Germany
fDate :
9/1/1967 12:00:00 AM
Abstract :
Equations are derived and discussed, describing the dynamic behaviour of the accumulation layer and the efficiency in the I.s.a. mode of operation.
Keywords :
Gunn effect; oscillators; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19670335
