• DocumentCode
    873989
  • Title

    Higher-order electromechanical response of thin films by contact resonance piezoresponse force microscopy

  • Author

    Harnagea, Catalin ; Pignolet, Alain ; Alexe, Marin ; Hesse, Dietrich

  • Author_Institution
    INRS - Energie, Materiaux et Telecommun., Univ. du Quebec, Varennes, Que.
  • Volume
    53
  • Issue
    12
  • fYear
    2006
  • fDate
    12/1/2006 12:00:00 AM
  • Firstpage
    2309
  • Lastpage
    2322
  • Abstract
    Piezoresponse scanning force microscopy (PFM) has turned into an established technique for imaging ferroelectric domains in ferroelectric thin films. At least for soft cantilevers, the piezoresponse signal is not only dependent on the elastic properties of the material under investigation but also on the elastic properties of the cantilever. Due to this dependency, the cantilever response and, therefore, the measured properties depend on the frequency of the small alternating current (AC) testing voltage. At the contact resonance, the cantilever response is maximum, and this increased sensitivity can be used to detect very small signals or to decrease the voltage applied to the sample. We have shown that by using the hysteretic ferroelectric switching, it is possible to separate the signal into its components (viz. electromechanical and electrostatic contributions). Additionally, the measurement frequency can be tuned such that the second and third harmonics of the electromechanical response can be detected at the cantilever resonance, providing information about the higher-order electromechanical coefficients. We assume that this nonlinear behavior seen in local and macroscopic measurements is rooted in the nonlinearity of the dielectric permittivity. Our results are of crucial importance for the study of ferroelectric and electromechanical properties of nanostructures
  • Keywords
    atomic force microscopy; dielectric hysteresis; ferroelectric switching; permittivity; piezoelectricity; thin films; alternating current testing voltage; cantilever response; contact resonance; dielectric permittivity; elastic properties; ferroelectric domains; ferroelectric thin; higher-order electromechanical coefficients; higher-order electromechanical response; hysteretic ferroelectric switching; nanostructures; piezoresponse scanning force microscopy; soft cantilevers; thin films; Current measurement; Dielectric measurements; Electrostatic measurements; Ferroelectric materials; Frequency measurement; Microscopy; Permittivity measurement; Resonance; Transistors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2006.179
  • Filename
    4037267