Title :
Interaction of technology and performance in complementary symmetry MOS integrated circuits
Author :
Ahrons, R.W. ; Gardner, Peter D.
Abstract :
The performance of COS/MOS integrated circuits depends in large measure upon the processing technology involved in their fabrication. Many limitations of the standard process can be avoided by use of new technologies that provide improved speed and power dissipation. However, selection of a particular fabrication technology must involve consideration of both performance advantages and process complexity.
Keywords :
Integrated circuits; Metal-insulator-semiconductor structures; integrated circuits; metal-insulator-semiconductor structures; Capacitance; Contracts; Delay; Fabrication; Failure analysis; Integrated circuit measurements; Integrated circuit technology; Inverters; Microelectronics; Power dissipation;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1970.1050061
