DocumentCode :
874574
Title :
MEMS microwave device with switchable capacitive and inductive states
Author :
Li, Luoqing ; Uttamchandani, Deepak
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Strathclyde, Glasgow
Volume :
3
Issue :
3
fYear :
2008
fDate :
9/1/2008 12:00:00 AM
Firstpage :
77
Lastpage :
81
Abstract :
A microwave microelectromechanical system (MEMS) device that can be switched between capacitive and inductive states over the frequency range of 1 to 16 GHz is reported. The device has been designed based on coplanar waveguide architecture, and realised in thickly electroplated nickel with front-side bulk micromachining of the substrate using a commercial foundry process. The capacitive-to-inductive switchover has been achieved by changing the gap of the interdigitated comb fingers using a chevron microactuator. Experimental characterisation of the device has been conducted, and capacitances ~0.2 pF in the frequency range of 1-16 GHz have been measured in the ´off´ state (driving voltage of the microactuator is 0 V), whereas inductances ~0.5 nH in the frequency range of 1-16 GHz have been measured in the ´on´ state (driving voltage of the microactuator is ~1 V).
Keywords :
capacitors; coplanar waveguides; inductors; micromachining; micromechanical devices; microwave devices; MEMS microwave device; capacitive-inductive switchover; chevron microactuator; commercial foundry process; coplanar waveguide architecture; electroplated nickel; frequency 1 GHz to 16 GHz; front-side bulk micromachining; interdigitated comb fingers; switchable capacitive state; switchable inductive state;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl:20080020
Filename :
4634714
Link To Document :
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