beta -SiC/Si heterojunction bipolar transistors with high current gain

Author

Sugii, T. ; Ito, T. ; Furumura, Y. ; Doki, M. ; Mieno, F. ; Maeda, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

9

Issue

2

fYear

1988

Firstpage

87

Lastpage

89

Abstract

The combination of single-crystalline beta -SiC and Si permits the fabrication of a heterojunction bipolar transistor (HBT) in which the conventional poly-Si or single-crystalline Si emitter is replaced with a single-crystalline SiC emitter, a technique compatible with existing Si technology. A common-emitter current gain of 800 is attained with this device. The value of the ideality factor n of the base current is 1.1, which suggests that diffusion current is dominant. The large number of misfit dislocations at the SiC/Si heterojunction are ineffective as recombination centers and do not deteriorate the characteristics of the HBT.<>

Keywords

bipolar transistors; semiconductor materials; silicon; silicon compounds; HBT; Si substrate; SiC-Si heterojunction bipolar transistor; base current; common-emitter current gain; diffusion current; high current gain; ideality factor; misfit dislocations; recombination centers; Conducting materials; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Impurities; Indium tin oxide; Lattices; Oxidation; Photonic band gap; Silicon carbide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2049

Filename

2049