Title :
Transistor characterization by effective large-signal two-port parameters
Author :
Houselander, L.S. ; Chow, H.Y. ; Spence, R.
fDate :
4/1/1970 12:00:00 AM
Abstract :
A method is proposed of transistor characterization by effective large-signal parameters measured under the condition of sinusoidal port voltages. It is anticipated that this form of active-device description will find application in the computer design of narrow-frequency-band constant-amplitude nearly sinusoidal amplifiers and oscillators.
Keywords :
Semiconductor device models; Transistors; semiconductor device models; transistors; Admittance; Analog memory; Application software; Circuit analysis; Electrons; Frequency; MOSFET circuits; Microwave transistors; Oscillators; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1970.1050076
