DocumentCode :
874727
Title :
Ultralinear transistor configuration under conditions of minimal power-supply drain current
Author :
Blessser, B.
Volume :
5
Issue :
3
fYear :
1970
fDate :
6/1/1970 12:00:00 AM
Firstpage :
125
Lastpage :
126
Abstract :
When transistors are operated at very low bias currents, excessive distortion is often produced by the changing emitter-base incremental resistance. A new configuration, characterized by an extremely low emitter resistance, which is independent of the output current, is proposed.
Keywords :
Circuits; Transistors; circuits; transistors; Bandwidth; Circuits; Costs; Hearing aids; Impedance; Nonlinear distortion; Operational amplifiers; Power amplifiers; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1970.1050088
Filename :
1050088
Link To Document :
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