DocumentCode :
874759
Title :
Comparison of input offset voltage of differential amplifiers using bipolar transistors and field-effect transistors
Author :
Lin, H.C.
Volume :
5
Issue :
3
fYear :
1970
fDate :
6/1/1970 12:00:00 AM
Firstpage :
126
Lastpage :
129
Abstract :
A field-effect transistor (whether junction type or MOS type) has very high input impedance. For those who desire to achieve a higher input impedance, it is often asked `Why aren´t FET pairs used as input stages and bipolar transistors used as output stages, since compatible FET and bipolar transistor monolithic structures have been developed?´ This correspondence is a study of this question.
Keywords :
Bipolar transistors; Differential amplifiers; Field effect transistors; Integrated circuits; bipolar transistors; differential amplifiers; field effect transistors; integrated circuits; Admittance; Bipolar transistors; Circuits; Differential amplifiers; Electrons; FETs; Gyrators; Impedance; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1970.1050090
Filename :
1050090
Link To Document :
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