Title :
Low-Temperature Microwave Annealing for MOSFETs With High-k/Metal Gate Stacks
Author :
Yao-Jen Lee ; Bo-An Tsai ; Chiung-Hui Lai ; Zheng-Yao Chen ; Fu-Kuo Hsueh ; Po-Jung Sung ; Current, Michael I. ; Chih-Wei Luo
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
In this letter, low-temperature (480°C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO2, and TaN/HfO2, after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT.
Keywords :
MOSFET; annealing; doping; hafnium compounds; high-k dielectric thin films; tantalum compounds; titanium compounds; EOT; MOSFET; TaN-HfO2; TiN-HfO2; dopant activation; dopant diffusion; equivalent oxide thickness; high-k/metal gate stacks; low-temperature microwave annealing; short channel effects; temperature 480 degC; Annealing; Electrodes; Logic gates; MOSFET; Tin; High-$k$; low temperature; metal gate; microwave annealing (MWA);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2279396
