DocumentCode :
87484
Title :
MSM Photodetector on a Polysilicon Membrane for a Silicon-Based Wafer-Level Packaged LED
Author :
Jin Kwan Kim ; Hee Chul Lee
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume :
25
Issue :
24
fYear :
2013
fDate :
Dec.15, 2013
Firstpage :
2462
Lastpage :
2465
Abstract :
A metal-semiconductor-metal (MSM) photodetector is fabricated on a thin polysilicon membrane embedded in a silicon-based wafer-level package for light-emitting diodes (LEDs) to accurately sense the brightness of a mounted LED. A thin polysilicon membrane, which is slightly askew above the LED chip, was made reproducibly and uniformly on a silicon substrate. In the membrane, an MSM photodetector having interdigitated fingers with 3 μm width and 3 μm space was fabricated. This device can receive light directly from the LED, and thereby shows a higher and more accurate photo-response, about 280 times higher than that of a conventional structure, to the LED mounted in the silicon-based wafer package.
Keywords :
elemental semiconductors; light emitting diodes; optical fabrication; photodetectors; silicon; wafer level packaging; MSM photodetector; Si; a silicon-based wafer-level package; light-emitting diodes; metal-semiconductor-metal photodetector; silicon-based wafer-level packaged LED; thin polysilicon membrane; Cavity resonators; Light emitting diodes; Photodetectors; Silicon; Substrates; Temperature measurement; Wavelength measurement; MSM devices; Photodetectors; light-emitting diodes; semiconductor devices; thin film devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2288771
Filename :
6658846
Link To Document :
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