Formation of source and drain regions for a-Si:H thin-film transistors by low-energy ion doping technique

Author

Yoshida, A. ; Setsune, K. ; Hirao, T.

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

9

Issue

2

fYear

1988

Firstpage

90

Lastpage

93

Abstract

A low-energy ion doping technique has been applied to form source and drain regions of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) with an inverted staggered electrode structure. Phosphine gas diluted in hydrogen was discharged by RF power and magnetic field. Both phosphorus and hydrogen ions were accelerated to an energy of 5.5 keV and implanted into heated samples. The ON-OFF current ratio and the field-effect mobility of the fabricated TFTs were 10/sup 6/ and 0.12 cm/sup 2//V-s, respectively.<>

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor doping; silicon; thin film transistors; 5.5 keV; PH/sub 3/-H/sub 2/; RF power; amorphous Si:H thin film transisstors; drain regions; field-effect mobility; inverted staggered electrode structure; low-energy ion doping; on off current ratio; source region; Acceleration; Doping; Electrodes; Fabrication; Hydrogen; Ion beams; Magnetic fields; Magnetic films; Radio frequency; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.2050

Filename

2050