Title :
Excess Avalanche Noise in In0.52Al0.48As
Author :
Goh, Y.L. ; Marshall, A.R.J. ; Massey, D.J. ; Ng, J.S. ; Tan, C.H. ; Hopkinson, M. ; David, J.P.R. ; Jones, S.K. ; Button, C.C. ; Pinches, S.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
fDate :
6/1/2007 12:00:00 AM
Abstract :
Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p+-i-n+ and n +-i-p+ diodes with nominal avalanche region widths between 0.1 and 2.5 mum. With pure electron injection, low excess noise was measured at values corresponding to effective k=beta/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; impact ionisation; indium compounds; p-i-n photodiodes; photodetectors; semiconductor device noise; InAlAs; avalanche noise; electron injection; excess noise; ionization coefficient; Charge carrier processes; Difference equations; Indium phosphide; Ionization; Noise measurement; Optical fiber communication; Optical noise; Semiconductor device noise; Signal to noise ratio; Telecommunications; Avalanche photodetectors; InAlAs; excess noise; impact ionization;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.897900
