• DocumentCode
    874942
  • Title

    Three-Dimensional FDTD Simulation of Micro-Pillar Microcavity Geometries Suitable for Efficient Single-Photon Sources

  • Author

    Ho, Ying-Lung Daniel ; Cao, Tun ; Ivanov, Pavel S. ; Cryan, Martin J. ; Craddock, Ian J. ; Railton, Chris J. ; Rarity, John G.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bristol Univ.
  • Volume
    43
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    462
  • Lastpage
    472
  • Abstract
    We present the results of calculations of the microcavity mode structure of distributed-Bragg-reflector (DBR) micro-pillar microcavities of group III-V semiconductor materials. These structures are suitable for making single photon sources when a single quantum dot is located at the center of a wavelength scale cavity. The 3-D finite difference time domain (FDTD) method is our primary simulation tool and results are validated against semi-analytic models. We show that high light extraction efficiencies can be achieved (>90%) limited by sidewall scattering and leakage. Using radial trench DBR microcavities or 2-D photonic crystal structures, we can further suppress sidewall emission, however, light is then redirected into other leaky modes
  • Keywords
    III-V semiconductors; distributed Bragg reflectors; finite difference time-domain analysis; integrated optics; light scattering; light sources; micro-optics; microcavities; photonic crystals; semiconductor quantum dots; distributed-Bragg-reflector microcavities; group III-V semiconductor materials; leaky modes; light extraction efficiency; microcavity mode structure; micropillar microcavity; radial trench microcavities; sidewall emission; sidewall leakage; sidewall scattering; single quantum dot; single-photon sources; three-dimensional finite difference time domain simulation; two-dimensional photonic crystal; Distributed Bragg reflectors; Finite difference methods; Geometry; III-V semiconductor materials; Light scattering; Microcavities; Quantum dots; Semiconductor materials; Solid modeling; Time domain analysis; Bragg reflection; cavity quantum electrodynamics; light confinement; optical microcavities; photonic bandgaps; quantum dots; spontaneous emission modification;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2007.897905
  • Filename
    4207492