Title :
100-ns electronically variable semiconductor memory using two diodes per memory cell
Author :
Waab, Sigurd ; Waggener, Herbert A.
Abstract :
See abstr. B24998, C13759 of 1970.
Keywords :
Semiconductor storage devices; semiconductor storage devices; Capacitance; Charge carrier lifetime; Isolation technology; Metallization; P-n junctions; Schottky diodes; Semiconductor diodes; Semiconductor memory; Voltage; Writing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1970.1050112
