Title :
SEU of Complementary GaAs Static Rams Due to Heavy Ions
Author :
Zuleeg, R. ; Notthoff, J.K. ; Nichols, D.K.
Author_Institution :
McDonnell Douglas Microelectronics Center Huntington Beach, CA 92647
Abstract :
The first measurement of single event upset (SEU) for complementary GaAs static RAMs caused by heavy ions is reported. Upset cross-sections of the circuits for 28 MeV oxygen ions are reported as well as the linear energy transfer (LET) threshold established by using 170 MeV oxygen ions at various angles of beam incidence.
Keywords :
Charge measurement; Circuits; Current measurement; Delta modulation; Gallium arsenide; Helium; Oxygen; Random access memory; Read-write memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333467
