Title :
Degradation in GaAs FETs Resulting from Alpha Particle Irradiation
Author :
Anderson, W.T., Jr. ; Campbell, A.B. ; Knudson, A.R. ; Christou, A. ; Wilkins, B.R.
Abstract :
Radiation effects were measured in GaAs FETs using 1.1 MeV alpha particles. With the devices under bias, degradation in current/ voltage characteristics and charge collection efficiency was observed during irradiation. Failure analysis revealed burnout in some, but not all, devices that appeared to be initiated by local melting of the GaAs under the gate.
Keywords :
Alpha particles; Apertures; Charge measurement; Chromium; Current measurement; Degradation; FETs; Gallium arsenide; Particle measurements; Radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333468
