Title :
Charge Collection in Ga/Aa Test Structures
Author :
McNulty, P.J. ; Abdel-Kader, W. ; Campbell, A.B. ; Knudson, A.R. ; Shapiro, P. ; Eisen, F. ; Roosild, S.
Author_Institution :
Clarkson University Potsdam, New York 13676
Abstract :
Evidence is presented for enhanced charge collection near the edges of large-area test structures on Rockwell´s GaAs 256 bit memory devices when held at high bias. Simulation calculations show that such enhanced charge collection at the edges of critical structures could lead to greatly increased SEU rates in space.
Keywords :
Circuits; FETs; Gallium arsenide; Implants; Microstructure; Protons; Silicon; Single event upset; Space technology; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333469
