• DocumentCode
    875093
  • Title

    Numerical Studies of Charge Collection and Funneling in Silicon Device

  • Author

    Grubin, H.L. ; Kreskovsky, J.P. ; Weinberg, B.C.

  • Author_Institution
    Scientific Research Associates, Inc., P.O. Box 498, Glastonbury, CT 06033
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • Firstpage
    1161
  • Lastpage
    1166
  • Abstract
    The results of a recently completed numerical study of charge and current transients following passage of ionizing particle through N+P diodes, and its dependence on excess carrier density, track and device length, are discussed.
  • Keywords
    Charge carrier density; Charge carrier processes; Electron mobility; Geometry; Neodymium; Particle tracking; Poisson equations; Radiative recombination; Silicon devices; Spontaneous emission;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1984.4333475
  • Filename
    4333475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875093