Title :
Numerical Studies of Charge Collection and Funneling in Silicon Device
Author :
Grubin, H.L. ; Kreskovsky, J.P. ; Weinberg, B.C.
Author_Institution :
Scientific Research Associates, Inc., P.O. Box 498, Glastonbury, CT 06033
Abstract :
The results of a recently completed numerical study of charge and current transients following passage of ionizing particle through N+P diodes, and its dependence on excess carrier density, track and device length, are discussed.
Keywords :
Charge carrier density; Charge carrier processes; Electron mobility; Geometry; Neodymium; Particle tracking; Poisson equations; Radiative recombination; Silicon devices; Spontaneous emission;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333475
