Title :
The Total Dose Dependence of the Single Event Upset Sensitivity of IDT Static RAMs
Author :
Campbell, A.B. ; Stapor, W.J.
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375
Abstract :
The sensitivity to single event upsets induced by 40 MeV protons for three types of Integrated Device Technology, Inc. static RAMs has been shown to increase with total dose exposure.
Keywords :
Automatic testing; Current measurement; Degradation; MOS devices; Monitoring; Protons; Read-write memory; Single event upset; Software testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1984.4333477
