Title :
GaAs/AlGaAs quantum cascade microlasers based on monolithic semiconductor-air Bragg mirrors
Author :
Höfling, S. ; Bazhenov, A. ; Fischer, M. ; Seufert, J. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Technische Phys., Univ. Wurzburg, Germany
Abstract :
Edge emitting GaAs-based quantum cascade microlasers at a wavelength of 9 μm were realised by monolithic integration of photonic bandgap mirrors based on deeply etched air-semiconductor Bragg gratings. The shortest operating device with Bragg mirrors on both sides has a cavity length of 180 μm.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; laser mirrors; microcavity lasers; photonic crystals; quantum cascade lasers; 180 micron; 9 micron; GaAs-AlGaAs; GaAs/AlGaAs quantum cascade microlasers; edge emitting microlasers; monolithic semiconductor-air Bragg mirrors; photonic bandgap mirrors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040104
