Title :
High-power 783 nm distributed-feedback laser
Author :
Wenzel, H. ; Klehr, A. ; Braun, M. ; Bugge, F. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
A ridge-waveguide GaAsP/AlGaAs laser, emitting an optical power of up to 200 mW in a single lateral and longitudinal mode at a wavelength of 783 nm, is presented. The distributed feedback is provided by a second-order grating, formed into an InGaP/GaAsP/InGaP multilayer structure. The laser is well suited as a light source for Raman spectroscopy.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 200 mW; 783 nm; GaAsP-AlGaAs; InGaP-GaAsP-InGaP; InGaP/GaAsP/InGaP multilayer structure; Raman spectroscopy; distributed feedback; high-power 783 nm distributed-feedback laser; ridge-waveguide GaAsP/AlGaAs laser; second-order grating; single lateral mode; single longitudinal mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040073
