DocumentCode :
875154
Title :
Simple model for electron-hole generation and switching mechanisms in ntype-GaAs diodes
Author :
Christensson, S.
Volume :
3
Issue :
11
fYear :
1967
fDate :
11/1/1967 12:00:00 AM
Firstpage :
507
Lastpage :
510
Abstract :
The electron-hole generation due to impact ionisation in the domain is calculated using a simple model for domain behaviour in the bulk and at the anode contact. It is shown that, in the bulk, the multiplication is only high enough to fill the hole traps, but, at the anode, avalanche breakdown may occur.
Keywords :
energy states; semiconductor diodes; semiconductor junctions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19670400
Filename :
4207926
Link To Document :
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