Title :
Design and performance of the GaAs FET
Author :
Bechtel, N. George ; Hooper, William W. ; Hower, Philip L.
Abstract :
See abstr. B25052 of 1970.
Keywords :
Field effect transistors; Microwave devices; field effect transistors; microwave devices; Acoustic signal processing; Delay lines; FETs; Frequency; Gallium arsenide; Microwave devices; Signal design; Substrates; Surface acoustic waves; Transversal filters;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1970.1050135
