• DocumentCode
    875271
  • Title

    C-band field effect transistor amplifiers

  • Author

    Clouser, Paul L. ; Risser, Vernon V.

  • Volume
    5
  • Issue
    6
  • fYear
    1970
  • fDate
    12/1/1970 12:00:00 AM
  • Firstpage
    323
  • Lastpage
    327
  • Abstract
    The basic elements used are Schottky-barrier field-effect transistors. These transistors, called MESFETs for metal-semiconductor field-effect transistors, have exhibited stable power gain to frequencies as high as 12 GHz. The results of this program thus far are given, including the circuit analysis, design parameters, and test results on a C-band demonstration amplifier.
  • Keywords
    Field effect transistors; Microwave amplifiers; Semiconductor-metal boundaries; field effect transistors; microwave amplifiers; semiconductor-metal boundaries; Circuit noise; Circuit theory; Epitaxial layers; FETs; Gain measurement; Gallium arsenide; Metallization; Microwave transistors; Noise figure; Noise measurement;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1970.1050136
  • Filename
    1050136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=875271