Gigahertz p-channel enhancement silicon MOSFET with nonoverlapping gate

The technological and electrical parameters of p-channel enhancement silicon m.o.s.f.e.t.s with recessed gates are presented and compared with conventional structures fabricated in a similar manner. In the instance of the nonoverlapping gate the gain-bandwidth product is increased by a factor of about 3. The maximum frequency, as obtained by extrapolation of measurements up to 1 GHz, is f/SUB max//spl ap/3 GHz. If the depletion region of the drain contact is too short to overlap with the gate field, the static characteristics follow a space-charge-limited current-voltage relation. When higher source-drain voltages are applied the normal enhancement-type behavior results but with reverse transconductance y/SUB r/ strongly reduced (by a factor of 8-12 at 1 GHz). A higher circuit stability is obtainable, whereas the parameters y/SUB i/,y/SUB 0/, and y/SUB f/ are only slightly influenced.